| Vgs (th) (Max) @ Id: | 5.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | TO-262 |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 56 mOhm @ 20A, 10V |
| Power Disipasi (Max): | 3.8W (Ta), 170W (Tc) |
| Pengemasan: | Tape & Reel (TR) |
| Paket / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 2020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Tiriskan untuk Sumber Tegangan (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25 ° C: | 33A (Tc) |
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